High resistive buffer layers by Fermi level engineering

Optimization of out-of-plane magnetized Co/Pt multilayers with resistive buffer layers

Ta oxide (TaOx) is investigated as a resistive buffer layer for the growth of high-quality Co/Pt multilayers with perpendicular magnetic anisotropy (PMA). The Pt/(Co/Pt)3 films grown on TaOx buffer layers exhibit stronger PMA than those grown on Pt buffer layers, and are of comparable quality to films grown on metallic Ta. The optimized multilayers with TaOx buffer layers remain out-of-plane ma...

Organic Solar Cells Performances Improvement Induced by Interface Buffer Layers

High-level acetaldehyde production in Lactococcus lactis by metabolic engineering.

Efficient conversion of glucose to acetaldehyde is achieved by nisin-controlled overexpression of Zymomonas mobilis pyruvate decarboxylase (pdc) and Lactococcus lactis NADH oxidase (nox) in L. lactis. In resting cells, almost 50% of the glucose consumed could be redirected towards acetaldehyde by combined overexpression of pdc and nox under anaerobic conditions.

Enhanced stability of filament-type resistive switching by interface engineering

The uncontrollable rupture of the filament accompanied with joule heating deteriorates the resistive switching devices performance, especially on endurance and uniformity. To suppress the undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer of NiOx into a sandwiched Al/TaOx/ITO resistive switching device. The NiOx/TaOx interface barrier...

Fermi velocity engineering in graphene by substrate modification

The Fermi velocity, vF, is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering vF. Indeed, several efforts have succeeded inmodifying vF by varying charge carrier concentration, n. Here we present a powerful but simple new...